RJP60D0DPM

Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Outl...