SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 4.
3A Drain-Source ON Resistance : RDS(ON)=1.
4 (Max) @VGS = 10V Qg(typ) = 12nC trr(typ) = 150ns
H G F F
KF5N50DR/DS
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
A C
K D
L
B
J
E N M
DIM MILLIMETERS _ 0.
20 A 6.
60 + _ 0.
20 6.
10 + B _ 0.
30 5.
34 + C _ 0.
20 D 0.
70 + _ 0.
15 E 2.
70 + _ 0.
10 2.
30 + F 0.
96 MAX G 0.
90 MAX H _ 0.
20 1.
80 + J _ 0.
10 2.
30 + K _ 0.
10 0.
50 ...