TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC4408
Power Amplifier Applications Power Switching Applications
2SC4408
Unit: mm
• Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 500 ns (typ.
) • Complementary to 2SA1680
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
80 50 6 2 0.
2 900 150 −55 to 150
V V V A A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ―
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