| Part Number | 2SD468 |
| Manufacturer | MCC |
| Title | NPN Epitaxial Silicon Transistor |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !... |
| Features |
x x Low Frequency Power Amplifier. Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
x x
Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Complementary pair with 2SB562
NPN Epitaxial Silicon Transistor
TO-92...
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| File Size | 297.92KB |
| Datasheet |
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2SD460 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Stora.
2SD463 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 3000(Min) @IC= 5A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO IC ICP IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 7 A 12 A 0.3.
2SD467 : 2SD467 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB561 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD467 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.7 1.0 0.5 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — 1 Typ — — — — — 0.19 0.76 280 12 Max — — — 1.0 240 0.5 1.0 — — Unit V .
2SD467 : 2SD467 Silicon NPN Epitaxial REJ03G0765-0200 (Previous ADE-208-1134) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB561 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 www.DataSheet.co.kr 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.7 1.0 0.5 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Datasheet pdf - http:/.
2SD467 : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features 2SB561 。 Complementary pair with 2SB561. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 85~170 C 120~240 http://www.fsbrec.com 1/6 2SD467 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM PC Tj Tstg .
2SD468 : 2SD468 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB562 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD468 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 1.0 1.5 0.9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — 1 Typ — — — — — 0.2 0.79 190 22 Max — — — 1.0 240 0.5 1.0 — — Unit V V .
2SD468 : UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES * Low frequency power amplifier * Complement to 2SB562 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD468L-x-T92-B 2SD468G-x-T92-B TO-92 2SD468L-x-T92-K 2SD468G-x-T92-K TO-92 2SD468L-x-T9N-B 2SD468G-x-T9N-B TO-92NL 2SD468L-x-T9N-K 2SD468G-x-T9N-K TO-92NL Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 123 ECB ECB ECB ECB Packing Tape Box Bulk Tape Box Bulk MARKING TO-92 TO-92NL www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-003.C 2SD468 NPN SILICON TRANSISTOR ABSOLUTE MAXIMU.
2SD468 : 2SD468 Silicon NPN Epitaxial REJ03G0766-0200 (Previous ADE-208-1135) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB562 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 www.DataSheet.co.kr 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 1.0 1.5 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Datasheet pdf - http:/.
2SD469 : · Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD469 isc website：www.iscsemi.com 1 isc & iscsemi is regist.