1Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 Banks MT41J128M8 – 16 Meg x 8 x 8 Banks MT41J64M16 – 8 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • VDD = VDDQ = +1.
5V ±0.
075V 1.
5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11 POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2 CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Selec...

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