MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
DRAWING
25.
0+/-0.
3 7.
0+/-0.
5 11.
0+/-0.
3
1
RoHS Compliance, Silicon MOSFET Power
Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type
transistor specifically designed for VHF/UHF High power amplifiers applications.
OUTLINE
4-C2
FEATURES
High power and High Gain: Pout70W, Gp10.
6dB @Vdd=12.
5V,f=175MHz Pout50W, Gp7.
0dB @Vdd=12.
5V,f=520MHz High Efficiency: 60%typ.
on VHF Band High Efficiency: 55%typ.
on UHF Band
24.
0+/-0.
6
2
10.
0+/-0.
3
9.
6+/-0.
3
3
R1.
6+/-0.
15
0.
1 -0.
01 4.
5+/-0.
7 6.
2+/-0.
7
+0.
05
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mob...