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RD70HVF1

Part Number	RD70HVF1
Manufacturer	Mitsubishi
Description	Silicon MOSFET Power Transistor
Published	Jul 6, 2012
Detailed Description	MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HVF1 DRAWING 25.0+/-0.3 7.0...
Datasheet	RD70HVF1 PDF File

Overview

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HVF1 DRAWING 25.
0+/-0.
3 7.
0+/-0.
5 11.
0+/-0.
3 1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
OUTLINE 4-C2 FEATURES High power and High Gain: Pout>70W, Gp>10.
6dB @Vdd=12.
5V,f=175MHz Pout>50W, Gp>7.
0dB @Vdd=12.
5V,f=520MHz High Efficiency: 60%typ.
on VHF Band High Efficiency: 55%typ.
on UHF Band 24.
0+/-0.
6 2 10.
0+/-0.
3 9.
6+/-0.
3 3 R1.
6+/-0.
15 0.
1 -0.
01 4.
5+/-0.
7 6.
2+/-0.
7 +0.
05 APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
5.
0+/-0.
3 18.
5+/-0.
3 RD70HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
3.
3+/-0.
2 RoHS COMPLIANT PIN 1.
DRAIN 2.
SOURCE 3.
GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pi...

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RD70HVF1 Silicon MOSFET Power Transistor - Mitsubishi

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