Part Number
|
RJH60T4DPQ-A0 |
Manufacturer
|
Renesas |
Description
|
High Speed Power Switching |
Published
|
Jul 20, 2012 |
Detailed Description
|
Preliminary Datasheet
RJH60T4DPQ-A0
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitt...
|
Datasheet
|
RJH60T4DPQ-A0
|
Overview
Preliminary Datasheet
RJH60T4DPQ-A0
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ.
(at IC = 30 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching R07DS0460EJ0100 Rev.
1.
00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 G
1.
Gate 2.
Collector 3.
Emitter 4.
Collector
E
1 2
3
www.
DataSheet.
net/
Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak c...
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