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RJH60T4DPQ-A0

Renesas
Part Number RJH60T4DPQ-A0
Manufacturer Renesas
Description High Speed Power Switching
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitt...
Datasheet PDF File RJH60T4DPQ-A0 PDF File

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Overview
Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ.
(at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching R07DS0460EJ0100 Rev.
1.
00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak c...


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