Part Number
|
RJH30H1DPP-M0 |
Manufacturer
|
Renesas |
Description
|
High Speed Power Switching |
Published
|
Jul 20, 2012 |
Detailed Description
|
Preliminary Datasheet
RJH30H1DPP-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate ...
|
Datasheet
|
RJH30H1DPP-M0
|
Overview
Preliminary Datasheet
RJH30H1DPP-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ.
, tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat)= 1.
5 V typ.
Low leak current: ICES = 1 A max.
Built-in Fast Recovery Diode: VF = 1.
4 V typ.
, trr = 23 ns typ.
Isolated package: TO-220FL R07DS0463EJ0200 Rev.
2.
00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
C
G
1.
Gate 2.
Collector 3.
Emitter
1
2 3
www.
DataSheet.
net/
E
Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Co...
Similar Datasheet