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RJH30H1DPP-M0

Part Number	RJH30H1DPP-M0
Manufacturer	Renesas
Description	High Speed Power Switching
Published	Jul 20, 2012
Detailed Description	Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features       Trench gate ...
Datasheet	RJH30H1DPP-M0 PDF File

Overview

Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features       Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ.
, tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat)= 1.
5 V typ.
Low leak current: ICES = 1 A max.
Built-in Fast Recovery Diode: VF = 1.
4 V typ.
, trr = 23 ns typ.
Isolated package: TO-220FL R07DS0463EJ0200 Rev.
2.
00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 www.
DataSheet.
net/ E Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Co...

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RJH30H1DPP-M0 High Speed Power Switching - Renesas

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