Part Number
|
RJH1CV6DPQ-E0 |
Manufacturer
|
Renesas |
Description
|
IGBT |
Published
|
Jul 20, 2012 |
Detailed Description
|
Preliminary Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT Application: Inverter
Features
Short circuit withstand time (5...
|
Datasheet
|
RJH1CV6DPQ-E0
|
Overview
Preliminary Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.
) Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 30 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 180 ns typ.
) in one package Trench gate and thin wafer technology High speed switching tf = 120 ns typ.
(at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0524EJ0500 Rev.
5.
00 Jun 12, 2012
Outline
RENESAS Package code: PRSS0003ZE-A (Package name: TO-247)
C
4 G
1.
Gate 2.
Collector 3.
Emitter 4.
Collector
E
1 2
3
www.
DataSheet.
net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector ...
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