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RJH1CV6DPQ-E0

Renesas
Part Number RJH1CV6DPQ-E0
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH1CV6DPQ-E0 1200V - 30A - IGBT Application: Inverter Features  Short circuit withstand time (5...
Datasheet PDF File RJH1CV6DPQ-E0 PDF File

RJH1CV6DPQ-E0
RJH1CV6DPQ-E0

Overview
Preliminary Datasheet RJH1CV6DPQ-E0 1200V - 30A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 180 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 120 ns typ.
(at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0524EJ0500 Rev.
5.
00 Jun 12, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to cas...


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