Part Number
|
RJP65S03DWT |
Manufacturer
|
Renesas |
Description
|
IGBT |
Published
|
Jul 21, 2012 |
Detailed Description
|
Preliminary Datasheet
RJP65S03DWT/RJP65S03DWA
650V - 30A - IGBT Application: Inverter
Features
Low collector to emitt...
|
Datasheet
|
RJP65S03DWT
|
Overview
Preliminary Datasheet
RJP65S03DWT/RJP65S03DWA
650V - 30A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 30 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.
) R07DS0820EJ0001 Rev.
0.
01 Jul 05, 2012
Outline
Die: RJP65S03DWT-80
2 C 3 1G 1 2
Wafer: RJP65S03DWA-80
1.
Gate 2.
Collector (The back) 3.
Emitter
www.
DataSheet.
net/
E 3
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 60 30 150 Unit V V A A C
Notes: 1.
This dat...
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