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RJP65S03DWA

Renesas
Part Number RJP65S03DWA
Manufacturer Renesas
Description IGBT
Published Jul 21, 2012
Detailed Description Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter Features  Low collector to emitt...
Datasheet PDF File RJP65S03DWA PDF File

RJP65S03DWA
RJP65S03DWA

Overview
Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.
) R07DS0820EJ0001 Rev.
0.
01 Jul 05, 2012 Outline Die: RJP65S03DWT-80 2 C 3 1G 1 2 Wafer: RJP65S03DWA-80 1.
Gate 2.
Collector (The back) 3.
Emitter www.
DataSheet.
net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 60 30 150 Unit V V A A C Notes: 1.
This data is a regulated value in evaluation package.
R07DS0820EJ0001 Rev.
0.
01 Jul 05, 2012 Page 1 of 3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ RJP65S03DWT/RJP65S03DWA Preliminary Electrical Characteristics (These data are an actual measurement value in evaluation package.
) (Ta = 25°C) Item Zero...


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