SUPER LOW NOISE InGaAs HEMT
June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise...
Mitsubishi Electric Semiconductor