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MGF4931AM

SUPER LOW NOISE InGaAs HEMT

Description

June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise...


Mitsubishi Electric Semiconductor

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