June/2004
MITSUBISHI SEMICONDUCTOR
MGF4931AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0. 6dB (Typ. ) High associated gain @ f=12GHz Gs = 11. 5dB (Typ. )
Fig. 1
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7. 5mA
ORDERING INFORMATION
Tape & reel 3000pcs. /reel
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MGF4931AM PDF File
