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MGFC42V7177

Part Number MGFC42V7177
Manufacturer Mitsubishi Electric Semiconductor
Description C band Internally Matched Power GaAs FET
Published Nov 1, 2012
Detailed Description C band Internally Matched Power GaAs FET MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an inter...
Datasheet MGFC42V7177




Overview
C band Internally Matched Power GaAs FET MGFC42V7177 7.
1 - 7.
7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.
1 – 7.
7 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Crass A operation Internally matched to 50(ohm)  High output power: P1dB = 16 W (typ.
) @ P1dB  High power gain: GLP = 8.
0 dB (typ.
)  High power added efficiency: PAE = 30 % (typ.
) APPLICATIONS  item 01 : 7.
1 – 7.
7GHz band power amplifier  item 51 : 7.
1 – 7.
7GHz band digital radio communication QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds = 10 V  Ids = 4.
5 A  Rg = 25  www.
DataShe...






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