Part Number
|
MGFC42V7177 |
Manufacturer
|
Mitsubishi Electric Semiconductor |
Description
|
C band Internally Matched Power GaAs FET |
Published
|
Nov 1, 2012 |
Detailed Description
|
C band Internally Matched Power GaAs FET
MGFC42V7177
7.1 - 7.7GHz BAND / 16W
DESCRIPTION
The MGFC42V7177 is an inter...
|
Datasheet
|
MGFC42V7177
|
Overview
C band Internally Matched Power GaAs FET
MGFC42V7177
7.
1 - 7.
7GHz BAND / 16W
DESCRIPTION
The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.
1 – 7.
7 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Crass A operation Internally matched to 50(ohm) High output power: P1dB = 16 W (typ.
) @ P1dB High power gain: GLP = 8.
0 dB (typ.
) High power added efficiency: PAE = 30 % (typ.
)
APPLICATIONS
item 01 : 7.
1 – 7.
7GHz band power amplifier item 51 : 7.
1 – 7.
7GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds = 10 V Ids = 4.
5 A Rg = 25
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