MGFC42V7177
7. 1 - 7. 7GHz BAND / 16W
DESCRIPTION
The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7. 1 – 7. 7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Crass A operation Internally matched to 50(ohm) High output power: P1dB = 16 W (typ. ) @ P1dB High power gain: GLP = 8. 0 dB (typ. ) High power added efficiency: PAE = 30 % (typ. )
APPLICATIONS
item 01 : 7. 1 – 7. 7GHz band power amplifier item 51 : 7. 1 – 7. 7GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds = 10 V Ids = 4. 5 A Rg = 25
www. DataSheet. net/
Absolute maximum ratings (Ta = 25 C)
Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown -15 ID Drain current 12 IGR Reverse gate current -40 IGF Forward gate current 84 PT *1 Total power dissipation 78. 9 Tch Channel temperature 175 Tstg Storage ...
MGFC42V7177 PDF File
