Silicon RF Power MOS FET (Discrete)
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power
Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type
transistor specifically designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from gate to source for ESD protection.
FEATURES •High power gain and High Efficiency.
Pout 1.
6W Typ, Gp 15dBTyp, 70%Typ
0.
4+/-0.
07 0.
5+/-0.
07 0.
4+/-0.
07 TYPE NAME
0.
8 MIN 2.
5+/-0.
1
4.
4+/-0.
1 1.
6+/-0.
1 LOT No.
1 0.
φ
1.
5+/-0.
1
1
2
1.
5+/-0.
1
3
1.
5+/-0.
1
0.
4 +0.
03 -0.
05 Terminal No.
1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
@Vdd=7.
2V,f=527MHz •Integrated gate protection diode APPLICATION For output stage...