isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -140V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for LF large signal power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEX
Collector-Emitter Voltage- VBE= 1.
5V
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-7
A
117
W
200
℃...