®
2N6388
SILICON
NPN POWER DARLINGTON
TRANSISTOR
s
s s s
STMicroelectronics PREFERRED SALESTYPE
NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
DESCRIPTION The device is a silicon epitaxial-base
NPN power
transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency power applications.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.
= 10 KΩ
R2 Typ.
= 160 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEV V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I B = 0) Collector-Emitter Voltage (V BE = -1.
5V) Collector-Emitter Voltage (R BE ≤ 100 Ω ...