2N6426
Discrete POWER & Signal Technologies
2N6426
C
BE
TO-92
NPN Darlington
Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.
0 A.
Sourced from Process 05.
See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 40 12 1.
2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are b...