SSM6J212FE
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J212FE
○ Power Management Switch Applications
• 1.
5-V drive • Low ON-resistance: RDS(ON) = 94.
0 mΩ (max) (@VGS = -1.
5 V)
RDS(ON) = 65.
4 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 49.
0 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 40.
7 mΩ (max) (@VGS = -4.
5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature Storage temperature range
Symbol
Rating
Unit
VDSS
-20
V
VGSS
±8
V
ID (Note 1)
-4.
0
A
IDP (Note 1)
-8.
0
PD (Note 2)
500
mW
t = 10s
700
Tch
150
°C
Tstg
−55 to 150
°C
ES6
1,2,5,6 ...