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SSM6J212FE

Toshiba Semiconductor
Part Number SSM6J212FE
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Feb 9, 2013
Detailed Description SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch App...
Datasheet PDF File SSM6J212FE PDF File

SSM6J212FE
SSM6J212FE

Overview
SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications • 1.
5-V drive • Low ON-resistance: RDS(ON) = 94.
0 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 65.
4 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 49.
0 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 40.
7 mΩ (max) (@VGS = -4.
5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDSS -20 V VGSS ±8 V ID (Note 1) -4.
0 A IDP (Note 1) -8.
0 PD (Note 2) 500 mW t = 10s 700 Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,6 ： Drain 3 ： Gate 4 ： Source JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the TOSHIBA 2-2N1J reliability significantly even if th...


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