Part Number
|
SSM6J216FE |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Feb 9, 2013 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J216FE
1. Applications
• Power Management Switches
2. Features
(1) 1.5-V gate...
|
Datasheet
|
SSM6J216FE
|
Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J216FE
1.
Applications
• Power Management Switches
2.
Features
(1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 88.
1 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 56.
0 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 39.
3 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 32.
0 mΩ (max) (@VGS = -4.
5 V)
3.
Packaging and Pin Configuration
ES6
SSM6J216FE
1.
2.
5.
6 : Drain 3 : Gate 4 : Source
Start of commercial production
2012-11
1
2014-03-12
Rev.
3.
0
SSM6J216FE
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-12
V
Gate-source voltage
VGSS
±8
Drain current (DC)
(N...
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