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SSM6J216FE

Toshiba Semiconductor
Part Number SSM6J216FE
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Feb 9, 2013
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J216FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate...
Datasheet PDF File SSM6J216FE PDF File

SSM6J216FE
SSM6J216FE

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J216FE 1.
Applications • Power Management Switches 2.
Features (1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 88.
1 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 56.
0 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 39.
3 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 32.
0 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Pin Configuration ES6 SSM6J216FE 1.
2.
5.
6 : Drain 3 : Gate 4 : Source Start of commercial production 2012-11 1 2014-03-12 Rev.
3.
0 SSM6J216FE 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Gate-source voltage VGSS ±8 Drain current (DC) (N...


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