NGTB30N120LWG
IGBT
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
Offering both low on−state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications.
Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Low Gate Charge • 5 ms Short−Circuit Capability • These are Pb−Free Devices
Typical Applications
• Inverter Welding Machines •...