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NGTB30N120LWG

ON Semiconductor
Part Number NGTB30N120LWG
Manufacturer ON Semiconductor
Description IGBT
Published May 26, 2013
Detailed Description NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) T...
Datasheet PDF File NGTB30N120LWG PDF File

NGTB30N120LWG
NGTB30N120LWG

Overview
NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
Offering both low on−state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications.
Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Low Gate Charge • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Inverter Welding Machines • Microwave Ovens • Industrial Switching • Motor Control Inverter ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax ICM 240 A Diode forward current @ TC = 25°C @ TC = 100°C IF A 60 30 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Power Dissipation PD @ TC = 25°C @ TC = 100°C 240 A $20 V W 560 224 Short−Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ ≤ 150°C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tsc TJ Tstg TSLD 5 ms −55 to +150 °C −55 to +150 °C 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.
com 30 A, 1200 V VCEsat = 1.
75 V Eoff = 1.
0 mJ C G E G C E TO−247 CASE 340L STYLE 4 MARKING DIAGRAM 30N120L AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device NGTB30N120LWG Packa...


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