Part Number
|
SIHG30N60E |
Manufacturer
|
Vishay Siliconix |
Description
|
Power MOSFET |
Published
|
Jun 23, 2013 |
Detailed Description
|
www.vishay.com
SiHG30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at ...
|
Datasheet
|
SIHG30N60E
|
Overview
www.
vishay.
com
SiHG30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C (Ω) Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
130 15 39 Single
0.
125
D
TO-247AC
G
S
D G
S N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses
• Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
Available
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting
- High-inte...
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