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SiHG30N60E

INCHANGE
Part Number SiHG30N60E
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 27, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance: ...
Datasheet PDF File SiHG30N60E PDF File

SiHG30N60E
SiHG30N60E

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switch Mode Power Supplies ·Power Factor Correction Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pulsed 65 A PD Total Dissipation @TC=25℃ 250 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS ...


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