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Part Number
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TK9J90E |
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Manufacturer
|
Toshiba |
|
Description
|
N-Channel MOSFET |
|
Published
|
Jul 11, 2013 |
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Datasheet
|
TK9J90E
|
Features
(1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)
3. Packaging and Internal Circuit
TK9J90E
TO-3P(N)
1: Gate 2: ...
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