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TK9J90E

Toshiba
Part Number TK9J90E
Manufacturer Toshiba
Description N-Channel MOSFET
Published Jul 11, 2013
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK9J90E PDF File

TK9J90E
TK9J90E

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK9J90E 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 1.
0 Ω (typ.
) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.
5 to 4.
0 V (VDS = 10 V, ID = 0.
9 mA) 3.
Packaging and Internal Circuit TK9J90E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-08 1 2014-02-28 Rev.
4.
0 TK9J90E 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energ...


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