IGBTs
2PG401
Insulated Gate Bipolar
Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.
2±0.
3 0.
8±0.
2
unit: mm
7.
0±0.
3 3.
0±0.
2
3.
5±0.
2
s Applications
q For flash-light for use in a camera
1.
1±0.
1
0.
85±0.
1 0.
4±0.
1
1.
0±0.
2
s Absolute Maximum Ratings (TC = 25°C)
Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 15 1.
3 150 −55 to +150 Unit V V A A W °C °C
1 4.
6±0.
4 2 3
10.
0 –0.
+0.
3
0.
...