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2PG402

Panasonic Semiconductor
Part Number 2PG402
Manufacturer Panasonic Semiconductor
Description Insulated Gate Bipolar Transistor
Published Mar 22, 2005
Detailed Description IGBTs 2PG402 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control l...
Datasheet PDF File 2PG402 PDF File

2PG402
2PG402

Overview
IGBTs 2PG402 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.
5± 0.
1 5.
3± 0.
1 4.
35± 0.
1 3.
0± 0.
1 q For flash-light for use in a camera 2.
3± 0.
1 0.
2max.
5.
5± 0.
1 7.
3± 0.
1 9.
8± 0.
1 1.
0± 0.
2 s Applications s Absolute Maximum Ratings (TC = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 10 1 150 −55 to +150 Unit V V A A W °C °C 2.
5± 0.
1 2.
5± 0.
1 0.
85± 0.
1 4.
6± 0...


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