Part Number
|
PTFA071701E |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FETs |
Published
|
Aug 6, 2013 |
Detailed Description
|
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, ...
|
Datasheet
|
PTFA071701E
|
Overview
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.
Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA071701E* Package H-36248-2
PTFA071701F* Package H-37248-2
Two-tone Drive-up
VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz
-20 60 55
Features
• • •
Drain Efficiency (%)...
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