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PTFA071701E

Infineon
Part Number PTFA071701E
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, ...
Datasheet PDF File PTFA071701E PDF File

PTFA071701E
PTFA071701E

Overview
PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.
Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA071701E* Package H-36248-2 PTFA071701F* Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -20 60 55 Features • • • Drain Efficiency (%)...


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