FDMS86350 N-Channel PowerTrench® MOSFET April 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 80 A, 2.
4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
„ Max rDS(on) = 2.
4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.
2 mΩ at VGS = 8 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Applications „ Primary MOSFET „ Synchronous Rectifier „ Load Switch „ Motor Control Switch Top Pin 1 ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)