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FDMS86350

Fairchild Semiconductor
Part Number FDMS86350
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDMS86350 N-Channel PowerTrench® MOSFET April 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 80 A, 2.4 mΩ Features...
Datasheet PDF File FDMS86350 PDF File

FDMS86350
FDMS86350

Overview
FDMS86350 N-Channel PowerTrench® MOSFET April 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 80 A, 2.
4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
„ Max rDS(on) = 2.
4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.
2 mΩ at VGS = 8 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Applications „ Primary MOSFET „ Synchronous Rectifier „ Load Switch „ Motor Control Switch Top Pin 1 Bottom S Pin 1 S S G S S S D D D G D D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) TC = 25 °C TA = 25 °C (Note 1a) (Note 4) (Note 3) Ratings 80 ±20 80 25 300 864 156 2.
7 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 0.
8 45 °C/W Package Marking and Ordering Information Device Marking FDMS86350 Device FDMS86350 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation FDMS86350 Rev.
C 1 www.
fairchildsemi.
com Free Datasheet http://www.
datasheet4u.
com/ FDMS86350 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ...


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