LAPT
2SA1215
Application : Audio and General Purpose
(Ta=25°C) 2SA1215 –100max –100max –160min 50min∗ –2.
0max 50typ 400typ V MHz pF
20.
0min 4.
0max 2 3 1.
05 +0.
2 -0.
1 5.
45±0.
1 5.
45±0.
1 B C E 0.
65 +0.
2 -0.
1 3.
0 +0.
3 -0.
1
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SC2921) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1215 –160 –160 –5 –15 –4 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.
5A VCE=–12V, IE=2A VCB=–10V, f=1MHz
External Dimensions MT-200
36.
4±0.
3 24.
4±0.
2 2-ø3.
2±0.
1 9 7 21.
4±0.
3 2.
1 6.
...