TOSHIBA
Transistor Silicon
PNP Triple Diffused (PCT process)
2SA1255
2SA1255
High Voltage Switching Applications
Unit: mm
• High voltage: VCBO = −200 V (min) VCEO = −200 V (min)
• Small package
• Complementary to 2SC3138
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−200 −200
−5 −50 −20 150 125 −55~125
V V V mA mA mW °C °C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.
g.
the application of high
TOSHIBA
2-3F1A
temper...