TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1356
Audio Power Amplifier Applications
2SA1356
Unit: mm
• Low saturation voltage: VCE (sat) = −0.
32 V (typ.
) (IC = −500 mA, IB = −50 mA)
• High collector power dissipation: PC = 1.
2 W (Ta = 25°C) • Complementary to 2SC3419
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −40 V
Collector-emitter voltage
VCEO −40 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−800
mA
Base current
IB −80 mA
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.
2 W
5
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA...