Ordering number:EN1426B
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1381/2SC3503
High-Definition CRT Display, Video Output Applications
Features Package Dimensions
unit:mm 2009A
[2SA1381/2SC3503]
· High breakdown voltage : VCEO≥300V.
· Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.
8 pF (
NPN), 2.
3pF (
PNP), VCB=30V.
· Adoption of MBIT process.
JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions...