isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Pc
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
40
w
150
℃
Tstg
Storage Temperature Range
...