N-Channel Power Trench MOSFET
FDMC8622 N-Channel Power Trench® MOSFET September 2012 FDMC8622 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: Features Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount packa...
Fairchild Semiconductor