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FDMC86012

Fairchild Semiconductor
Part Number FDMC86012
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ Fea...
Datasheet PDF File FDMC86012 PDF File

FDMC86012
FDMC86012


Overview
FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.
7 mΩ Features „ Max rDS(on) = 2.
7 mΩ at VGS = 4.
5 V, ID = 23 A „ Max rDS(on) = 4.
7 mΩ at VGS = 2.
5 V, ID = 17.
5 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ 100% UIL Tested „ RoHS Compliant General Description This device has been designed specifically to improve the efficiency of DC/DC converters.
Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.
Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits.
Very low rDS(on) has been maintained to provide a sub logic-level device.
Applications „ 3.
3 V input synchronous buck switch „ Synchronous rectifier Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 ...


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