Part Number
|
FDMC8651 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel Power Trench MOSFET |
Published
|
Sep 9, 2013 |
Detailed Description
|
FDMC8651 N-Channel Power Trench® MOSFET
July 2008
FDMC8651
N-Channel Power Trench® MOSFET
30 V, 20 A, 6.1 mΩ
Features
...
|
Datasheet
|
FDMC8651
|
Overview
FDMC8651 N-Channel Power Trench® MOSFET
July 2008
FDMC8651
N-Channel Power Trench® MOSFET
30 V, 20 A, 6.
1 mΩ
Features
Max rDS(on) = 6.
1 mΩ at VGS = 4.
5 V, ID = 15 A Max rDS(on) = 9.
3 mΩ at VGS = 2.
5 V, ID = 12 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This device has been designed specifically to improve the efficiency of DC/DC converters.
Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.
Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits.
Very low rDS(on)...
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