Data Sheet
μPA2660T1R
DUAL N-CHANNEL MOSFET 20 V, 4.
0 A, 42 mΩ
Description
The μPA2660T1R is Dual N-channel MOS Field Effect
Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
R07DS0999EJ0100 Rev.
1.
00 Jan 16, 2013
Features
• DS MAXIMUM RATINGS 20V(TA = 25°C) • 2.
5V drive available • Low on-state resistance ⎯ RDS (on)1 = 42 mΩ MAX.
(VGS = 4.
5 V, ID = 2.
0 A) ⎯ RDS (on)2 = 62 mΩ MAX.
(VGS = 2.
5 V, ID = 2.
0 A) • Built-in gate protection diode • Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number Package 6pi...