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UPA2660T1R

Renesas
Part Number UPA2660T1R
Manufacturer Renesas
Description DUAL N-CHANNEL MOSFET
Published Sep 17, 2013
Detailed Description Data Sheet μPA2660T1R DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field E...
Datasheet PDF File UPA2660T1R PDF File

UPA2660T1R
UPA2660T1R

Overview
Data Sheet μPA2660T1R DUAL N-CHANNEL MOSFET 20 V, 4.
0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
R07DS0999EJ0100 Rev.
1.
00 Jan 16, 2013 Features • DS MAXIMUM RATINGS 20V(TA = 25°C) • 2.
5V drive available • Low on-state resistance ⎯ RDS (on)1 = 42 mΩ MAX.
(VGS = 4.
5 V, ID = 2.
0 A) ⎯ RDS (on)2 = 62 mΩ MAX.
(VGS = 2.
5 V, ID = 2.
0 A) • Built-in gate protection diode • Lead-free and Halogen-free 6pinHUSON2020(Dual) Ordering Information Part Number Package 6pinHUSON2020(Dual) Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode and other parts.
) μPA2660T1R-E2-AX∗1 Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (1 unit, 5 s) ∗2 Total Power Dissipation (2 units, 5 s) ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch TSTG Ratings 20 ±12 ±4.
0 ±16 1.
5 2.
3 150 –55 to +150 Unit V V A A W W °C °C Channel Temperature Storage Temperature Notes: ∗1.
PW≤10 μs, Duty Cycle≤1% ∗2.
Mounted on glass epoxy board of 25.
4mm x 25.
4mm x 0.
8mmt Caution: This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge.
VESD = ±400V MIN.
( C = 100pF, R = 1.
5KΩ ) R07DS0999EJ0100 Rev.
1.
00 Jan 16, 2013 Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ μPA2660T1R Electrical Characteristics (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate ...


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