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KU047N08P

Part Number KU047N08P
Manufacturer KEC
Description N-ch Trench MOS FET
Published Sep 21, 2013
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet KU047N08P




Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 130A Drain-Source ON Resistance : RDS(ON)=4.
7m (Max.
) @VGS = 10V D N N A KU047N08P N-ch Trench MOS FET O C F E G B Q DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E I K M L J H P F G H I J K L M N O 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
...






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